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WFU Physics Colloquium

TITLE: "RF Micro Devices: GaAs HBT and More"

SPEAKER: Dr. Bruce Schmukler ,

Design Engineering Manager for the Broadband Product Line

RF Micro Devices , Greensboro, NC

TIME: Thursday Oct. 5, 2000 at 4 PM

PLACE: George P. Williams, Jr. Lecture Hall, (Olin 101)


Refreshments will be served at 3:30 PM in the lounge. All interested persons are cordially invited to attend.

ABSTRACT

RF Micro Devices is a semiconductor manufacturer based in Greensboro, NC. It is particularly known for its GaAs Heterojunction Bipolar Transistor (HBT) technology. This presentation will provide a brief history of RF Micro Devices, describe the various product lines along with the markets they serve, and review the prototyping and manufacturing facilities of the company. In addition, a review of the various semiconductor technologies used to design products will be presented, and the various advantages and disadvantages of each technology will be discussed. A special emphasis will be given to RFMD's GaAs HBT technology.


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