Invited Speakers

O. Auciello, USA science & technology of ferroelectric films for nonvolatile memory

C. R. A. Catlow, UK, defects in aluminosilicates and their relationship to catalysis

J.T. Dickinson, USA, laser-induced desorption from ionic crystals

K. Edamatsu, Japan, infrared studies of self-trapped excitons

C. P. Flynn, USA, intrinsic diffusion properties of ionic oxides

I. Földvári, Hungary, photorefractive & photochromic properties of bismuth tellurite

I. Fugol, Ukraine, defect phenomena in cryo-crystals

M. J. Gillan, UK, first-principles theory of defects in oxide materials

S. Houde-Walter, USA, new optical technologies using dopants & defects in glass

N. Itoh , Japan, material modification by electronic excitation

K. Kan'no, Japan, fluorinated fullerenes

V. Kempter, Germany, metastable impact electron spectroscopy of surface defects

E. A. Kotomin, Latvia, kinetics of radiation defect accumulation in ionic solids

A. Lushchik, Estonia, vuv-induced multiple excitations & defect stabilization

R. S. Meltzer, USA, defects and optical dephasing of ions in solids

E. Meyer, Switzerland, atomic force microscopy

R. M. Montereali, Italy, prospects for active waveguides in alkali fluoride films

D. T. Morelli, USA, phonon-defect interactions in diamond

H. Morkoc, USA, GaN, AlN, and InN: applications & defects

C. E. Mungan, USA, energy relaxation of simple impurities

I. V. Murin, , Russia, superionic conduction in tysonite structure compounds

V. Mürk, , Estonia, exciton relaxation in wide-gap complex oxides

M. Nikl, , Czech. Rep., relaxed bound excitons and impurity states in CsX:Tl

S. V. Nistor, Romania, from p-type impurity centers to electron self-trapping

I. Ogorodnikov, Russia, defect properties of beryllium oxide

G. Petite, France, ultrafast phenomena in oxide insulators

E. Radzhabov, Russia, oxygen defects in fluoride crystals

R. Ramirez, , Spain, impact ionization conductivity in MgO:Li

M. Reichling, Germany, microstructure of radiation damage at halide surfaces

J. F. Schetzina, USA, II-VI diode laser materials and defects

H. Schmalzried, Germany, chemical kinetics of solids

A. L. Shluger, UK/Latvia, modeling the AFM tip-sample interaction

J. -M. Spaeth, Germany, EPR and ENDOR of defects in silicon carbide

R. Spontak, USA, phase behavior of ordered diblock copolymer blends

A. Stesmans, Belgium, buried SiO2 films: interfaces & defects

M. Szymonski, Poland, desorption from epitaxial & bulk alkali halides

K. Tanimura, Japan, new results in femtosecond photolysis

A. Trukhin, , Latvia, self-trapped excitons in SiO2, GeO2, Li2GeO3, AlPO4, & GaPO4

A. Vasil'ev, Russia, final stages of inelastic electron scattering in insulators

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